Kouji Mimura, Manabu Kishida
The purification of metallurgical grade silicon (MG-Si) using the plasma-arc zone melting method (PZM) has been investigated to meet the growing demand for high-purity silicon for solar grade applications. The objective of the study was to assess the effectiveness of PZM, particularly with hydrogen plasma-arc, in reducing metallic and non-metallic impurities in MG-Si. The methodology involved the horizontal displacement of a molten zone heated under atmospheric pressure by Ar- and 10%H2+Ar-plasma-arc. Results showed significant segregation of impurities; metallic contaminants such as Fe, Ti, Cr, Mn, Cu, Al, and Ca were reduced to less than 1 mass ppm at the head of the silicon bar. Additionally, non-metallic impurities including boron, phosphorus, carbon, and oxygen were effectively diminished through the zoning effect and the action of activated hydrogen atoms in the plasma-arc. The findings suggest that the plasma-arc zone melting technique with hydrogen plasma offers a promising approach for the purification of MG-Si, making it an effective method for producing low-cost solar grade silicon (SOG-Si).
@article{12a6b67d-2472-4c2c-af58-6328786ac907,
title={PLASMA-ARC ZONE REFINING OF SILICON},
author={Kouji Mimura and Manabu Kishida},
year={2023},
language={en}
}TY - JOUR TI - PLASMA-ARC ZONE REFINING OF SILICON AU - Kouji Mimura AU - Manabu Kishida PY - 2023 LA - en ER -
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