Crystallization of Thin Copper Films on

The synthesis of graphene on thin copper films deposited on quartz substrates is investigated to enhance the understanding of crystallization processes. This study aims to explore how the different thicknesses of the copper films (300 nm and 1150 nm) and the thermal annealing conditions (at temperatures of 950°C and 1000°C for durations of 30 or 90 minutes) affect the structural properties of the metal films and the subsequent growth of graphene. Methodologically, the deposited copper films were characterized using electron backscatter diffraction, while the synthesized graphene films were analyzed through Raman spectroscopy and scanning probe microscopy. The results revealed that higher annealing temperatures and longer annealing times contribute to an increase in copper grain size, which in turn facilitates the growth of larger graphene films. Notably, the scanning probe microscopy in phase contrast mode was effective in distinguishing graphene with different layer counts and revealed that a monolayer of graphene preferably forms on copper grains with the {111} orientation. This study highlights the potential of using specific techniques for analyzing graphene growth and emphasizes the importance of substrate preparation and film crystallization in achieving high-quality graphene synthesis.