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Ferroelectric–carbon nanotube memory devices

Ashok Kumar, Sai G Shivareddy

2012enferroelectricsnanotechnologymemory devicescarbon nanotubes

Abstract

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One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNT–inorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb (Zr, Ti) O3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/ Cm phase, which is the origin of the high piezoelectric response in the system. Low–loss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device.

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Cite This Work

@article{3fd5024d-beaa-4e22-99b6-83c1b4c20ff9,
  title={Ferroelectric–carbon nanotube memory devices},
  author={Ashok Kumar and Sai G Shivareddy},
  year={2012},
  language={en}
}
TY  - JOUR
TI  - Ferroelectric–carbon nanotube memory devices
AU  - Ashok Kumar
AU  - Sai G Shivareddy
PY  - 2012
LA  - en
ER  -

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