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SURFACE MODIFICATION OF SEMICONDUCTOR TH

Fitri Rahmawati, Sayekti Wahyuningsih

2026ensemiconductorgraphite/TiO2Cu electrodepositionphotocatalysissurface modification

Abstract

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Surface modification of graphite/TiO2 has been achieved through Cu electrodeposition, aiming to investigate its effects on enhancing the photocatalytic properties of TiO2. The electrodeposition process utilized a 0.4 M CuSO4 aqueous solution under controlled current conditions. The X-ray diffraction (XRD) analysis revealed the presence of new peaks corresponding to copper at 2θ values of 43-44° and 50-51°, indicating a face-centered cubic structure with a crystalline size of 26-30 nm. Despite the presence of impurities, as evidenced by CTABr residues, it was found that Cu particles are uniformly distributed within the porous structure of the thin film. Moreover, the modified graphite/TiO2/Cu composite exhibited superior photoconversion efficiency compared to the unmodified graphite/TiO2, demonstrating the effectiveness of Cu deposition in improving the photocatalytic activity of the semiconductor material.

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Cite This Work

@article{43e544b7-5e47-456b-8f26-88f3b3348220,
  title={SURFACE MODIFICATION OF SEMICONDUCTOR TH},
  author={Fitri Rahmawati and Sayekti Wahyuningsih},
  year={2026},
  language={en}
}
TY  - JOUR
TI  - SURFACE MODIFICATION OF SEMICONDUCTOR TH
AU  - Fitri Rahmawati
AU  - Sayekti Wahyuningsih
PY  - 2026
LA  - en
ER  -

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