U. C. Pernisz, K. G. Sharp
Fluorinated silane derivatives were synthesized as precursors for preparing amorphous silicon (a-Si) thin films in a glow discharge deposition reactor. The objective was to explore the viability of using these precursors for generating both intrinsic and doped a-Si films. The methodology involved admixture of diborane and phosphine into the gaseous precursor during deposition. Comprehensive measurements of photoconductivity and the temperature-dependent dark conductivity were conducted to characterize the films. Additionally, photoresponse, optical absorption, and electron microscopy data were obtained to analyze the film properties. The results indicated that representative samples of fluorinated amorphous silicon (a-Si:H:F) showed a significant photoconductivity of approximately 10^-4 S cm^-1 under simulated sunlight, while the dark conductivity at room temperature was consistently around 10^-5 S cm^-1. The mobility-lifetime product, as derived from photoresponse measurements at 640 nm, achieved standard values of about 2 × 10^-6 cm^2 V^-1. The findings suggest that using fluorinated silanes could lead to advantageous pathways for synthesizing less hazardous amorphous silicon materials, contributing to enhanced solar cell efficiency.
@article{48ef2a1d-0cf8-4b50-a908-43863abff2aa,
title={Preparation of solar grade amorphous sil},
author={U. C. Pernisz and K. G. Sharp},
year={2026},
language={en}
}TY - JOUR TI - Preparation of solar grade amorphous sil AU - U. C. Pernisz AU - K. G. Sharp PY - 2026 LA - en ER -
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