Fethullah Gu ¨ nes¸, Hyeon-Jin Shin
This study investigates the potential of few-layer graphene films as an alternative to conventional indium tin oxide (ITO) for use in flexible transparent conducting applications. The primary objective is to enhance the electrical conductivity of graphene films through a layer-by-layer doping technique. A systematic methodology was implemented utilizing various chemical dopants to reduce sheet resistance while maintaining high transmittance characteristics. The results indicate that the incorporation of optimized dopants led to a significant reduction in sheet resistance, achieving up to a 90% improvement compared to untreated few-layer graphene films. Additionally, the high quality and large area of the graphene films were confirmed through chemical vapor deposition (CVD), underscoring their robustness and potential for commercial applications. The enhancement of electrical connectivity and the flexibility of these films positions them as promising candidates for future electronic devices and transparent conductive applications.
@article{4e8e90d2-5a46-43c2-a734-5605e80697ad,
title={Layer by layer doping of few layer graph},
author={Fethullah Gu ¨ nes¸ and Hyeon-Jin Shin},
year={2026},
language={en}
}TY - JOUR TI - Layer by layer doping of few layer graph AU - Fethullah Gu ¨ nes¸ AU - Hyeon-Jin Shin PY - 2026 LA - en ER -
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