Nitrogen cluster doping for high mobilit

Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However, the introduction of scattering centers limits this technique due to reduced carrier mobilities and conductivities of the resulting material. In this study, we demonstrate the rapid growth of graphitic nitrogen cluster–doped monolayer graphene single crystals on Cu foil, achieving a remarkable carrier mobility of 13,000 cm2 V−1 s−1 and a greatly reduced sheet resistance of only 130 ohms square−1. The exceedingly large carrier mobility with high n-doping levels is realized through (i) the incorporation of nitrogen-terminated carbon clusters, which suppresses carrier scattering, and (ii) the elimination of defective pyridinic nitrogen centers via oxygen etching. This research paves the way for the growth of high-mobility and high-conductivity doped graphene with tunable work functions, offering promising prospects for scalable graphene-based electronic and device applications.