D. Snyder, P. Sides
The growth rate, crystal structure, morphology, and electronic properties of homoepitaxial CdTe grown by OMVPE in an impinging jet reactor were investigated. Under operating conditions where surface reactions controlled the rate, the deposition rate depended on the diethyltelluride partial pressure to the power of 0.8 and on the dimethylcadmium partial pressure to the power of 0.2, approximately. Cadmium was easily adsorbed and was ubiquitous on the surface during deposition; tellurium was relatively scarce on the surface. Deposition on three of the four low-index orientations proceeded at the same rate; CdTe grew on the (1 1 1) surface, however, at twice this rate. Hillocks were removed completely by deposition on a (100) surface misoriented three degrees toward the (1 1 1). Modeling of the fluid dynamics and mass transport in the reactor confirmed the high mass transfer rates obtainable with the impinging jet reactor, though the mass transfer limited deposition was nonuniform under the jet.
@article{5e9c46b6-550a-4a15-8185-e578affa1d2c,
title={GROWTH KINETICS CRYSTAL STRUCTURE AND MO},
author={D. Snyder and P. Sides},
year={2026},
language={en}
}TY - JOUR TI - GROWTH KINETICS CRYSTAL STRUCTURE AND MO AU - D. Snyder AU - P. Sides PY - 2026 LA - en ER -
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