Ningli Zhu, Kaisi Xu
This paper reports on a simple approach for fabricating modest aspect ratio field emission arrays (FEAs) directly from bulk molybdenum substrates via the use of fluorine inductive-coupled-plasma (ICP) etching. The objective was to optimize the fabrication process to eliminate thin film interfaces, thus reducing tip delamination during operation. Methodologically, a 400 μm thick, 4-inch high purity Mo wafer was employed, demonstrating a process that allows for the construction of highly controlled arrays of more than 10^6 tips with inter-tip pitches of 10 μm. The results revealed that the as-fabricated devices exhibited low turn-on electric fields of 1.21 V/μm at a current of 100 nA, and maximum currents reached up to 140 μA at 5.48 V/μm. Additionally, spatially uniform emission with the capability for optical modulation in white light was observed, indicating the potential of Mo-FEAs for high beam current continuous emission applications.
@article{60992847-2576-4bfc-86d4-71cb5f085927,
title={Bulk Molybdenum Spindt Field Emission Arrays},
author={Ningli Zhu and Kaisi Xu},
year={2014},
language={en}
}TY - JOUR TI - Bulk Molybdenum Spindt Field Emission Arrays AU - Ningli Zhu AU - Kaisi Xu PY - 2014 LA - en ER -
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