large-area graphene-based flexible transparent conducting films

This study presents a simple approach for synthesizing few-layer graphene sheets and transferring them onto a flexible substrate. The research investigates the hydrogen effect on the D band intensity of Raman spectra of few-layer graphene sheets synthesized through chemical vapor deposition (CVD) on a nickel-evaporated silicon substrate, optimizing the mixing ratio of C2H4/H2. Utilizing a technique to melt away the squeezed nickel layers that are trapped between the graphene sheet and silicon substrate, the graphene is then transferred to a polyethylene terephthalate film using a fishing method. The results indicate that the transfer condition of graphene is significantly influenced by the cooling rate of the film during the CVD synthesis process. Furthermore, it was found that the sheet resistance of the films decreases with increasing thickness, achieving a noteworthy sheet resistance of 233 Ω/sq at a transmittance of 62%. These findings highlight the potential for practical applications of graphene in flexible electronic devices.