Complementary junction field-effect transistor logic gate

Integrated circuits (ICs) capable of operating at high temperatures hold significant potential for applications in automotive, aerospace, and deep-well drilling. Traditional silicon-based complementary metal-oxide-semiconductor (CMOS) circuits are limited to temperatures below 200 ◦C, compelling the exploration of wide bandgap semiconductors, particularly silicon carbide (SiC). This study presents the operation of SiC complementary junction field-effect transistors (CJEFETs) that function effectively at 300 ◦C with a remarkably low supply voltage of 1.4 V. We demonstrate that the CJFET inverter exhibits a logic threshold voltage shift of only 0.2 V from room temperature up to 300 ◦C, highlighting the stability of these devices under thermal stress. Additionally, the dependencies of both static and dynamic characteristics of the CJFET inverter are elucidated through a straightforward analytical model, facilitating electronic circuit simulation. This advancement promises enhanced design capabilities for intricate circuits and memory systems utilizing SiC CJFET technology, therefore extending operational viability across a broad temperature spectrum.