K. Radhi Devi, G. Selvan
In this study, undoped and Al doped ZnO thin films were synthesized using the SILAR method and subsequently characterized for their structural, surface morphological, optical, photoluminescence, and gas sensor properties through various analytical techniques, including XRD, FE-SEM, UV-Vis spectroscopy, and a homemade gas sensor setup. The XRD results revealed a Wurtzite crystal structure that matched the JCPDS card No. 36-1451, with crystallite sizes of 56 nm for undoped and 42 nm for Al doped films. Field emission scanning electron microscopy confirmed the spherical morphology of the prepared films. Notably, the Al-ZnO thin film-based sensors exhibited enhanced sensitivity and response to ammonia (NH₃) gas, indicating their potential applicability in gas sensing technologies. These findings underscore the significance of aluminum doping in optimizing the gas sensing performance of ZnO thin films, thereby contributing valuable insights for the development of efficient and cost-effective gas sensors for environmental monitoring and safety applications.
@article{80b3058a-769c-4d72-947c-7e905bcf0f83,
title={NH 3 sensor based SILAR coated undoped a},
author={K. Radhi Devi and G. Selvan},
year={2026},
language={en}
}TY - JOUR TI - NH 3 sensor based SILAR coated undoped a AU - K. Radhi Devi AU - G. Selvan PY - 2026 LA - en ER -
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