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Synthesis of porous silicon through inte

Mingrui Zhao, Rajesh Balachandran

2026enporous siliconelectrochemistrycyclic voltammetrymacroporesmesoporesHF etching

Abstract

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This paper explores the synthesis of porous silicon using a novel contactless electrochemical approach, distinct from traditional anodization methods that rely on external bias. The primary objective was to fabricate porous silicon films with varying thicknesses consisting of macropores and mesopores, while investigating their electrochemical responses through cyclic voltammetry (CV). The methodology involved characterizing pore dimensions and porosity via scanning electron microscopy (SEM), followed by CV analysis to uncover the topographical variations between blanket and porous silicon surfaces. The results demonstrate a scalable fabrication method for porous silicon structures and challenge the existing theories about pore formation mechanisms, particularly those based on localized collection of electronic hole carriers during anodization. This research contributes valuable insights that may lead to the development of more accurate models for understanding porous silicon formation. The findings have implications for various applications in solar cells, fuel cells, sensors, and more.

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Cite This Work

@article{82b974f0-872c-4fc2-beca-7a2ffd60bd20,
  title={Synthesis of porous silicon through inte},
  author={Mingrui Zhao and Rajesh Balachandran},
  year={2026},
  language={en}
}
TY  - JOUR
TI  - Synthesis of porous silicon through inte
AU  - Mingrui Zhao
AU  - Rajesh Balachandran
PY  - 2026
LA  - en
ER  -

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