Arijit Roy, Cher Ming Tan
Electromigration experiments are conducted for submicron dual damascene copper lower level interconnect samples of different stress free temperatures. The electromigration life-time is found to be strongly dependent on the stress state of the metallization and the stress gradient that exists due to thermal mismatch of various materials surrounding the copper metallization. It is found that by reducing the stress free temperature, electromigration lifetime can be improved. In order to explain the life-time behavior, an atomic flux divergence based coupled field line element model is developed. The model predicts a reduction in the atomic flux divergence at the electromigration test condition due to the reduction in the stress free temperature as the key factor responsible for the longer electromigration life-time observed experimentally.
@article{8db4023e-6b90-4aec-b64e-6b687b5655a0,
title={Experimental investigation on the impact},
author={Arijit Roy and Cher Ming Tan},
year={2026},
language={en}
}TY - JOUR TI - Experimental investigation on the impact AU - Arijit Roy AU - Cher Ming Tan PY - 2026 LA - en ER -
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