Comprehensive review of memristor based phase change memory M 2026 Next Mat

The research in phase change memory (PCM) is gaining increased attention due to its fast-switching time, scalability, multi-level programming, and reversible phase change properties. Phase change memory works by using phase changes in the amorphous and crystalline states. Phase change memory can be used in computer applications due to its capability of storing data and changing conductance. The various methodologies used in the modeling of analog and digital PCM will be critically analyzed in this paper. Different methodologies such as electro-thermal models, compact models, multiphysics models, and physics-based models have been analyzed in order to understand different phenomena such as threshold switching, crystallization, thermal conduction, and resistance change in PCM. The comparative analysis of the various advanced materials and structures like GST225, GST467, CNT-enabled PCM, and superlattices takes place owing to their switching behavior, programming energy, thermal issues, and scaling effects. Important reliability aspects like resistance drift, process variability, endurance deterioration, and thermal stability have been considered due to their considerable impact on computational performance. Moreover, topics such as artificial intelligence-based memory simulation, energy-efficient PCM, photonic PCM, and cryogenic computing have also been explored as promising future directions in memory technologies and intelligent computing.