Gate Dependent Tunnelling Current Modula

This study investigates the modulation of tunneling characteristics in graphene/hexagonal boron nitride (hBN) vertical heterostructures with varying hBN interlayer thicknesses. The objective is to understand how these thickness variations affect the device's threshold voltages and tunneling current, aiming to enhance the performance of graphene-based transistors for high-frequency applications. The methodology includes implementing back-gate voltages to manipulate the Fermi level in the bottom graphene layer, facilitating the tuning of threshold voltages. Results demonstrate an observable increase in threshold voltages corresponding to hBN layer thickness, as well as pronounced gate-dependent tunneling characteristics. This modulation of electronic properties indicates significant potential for optimizing vertical transistor designs, contributing to advancements in logic and tunnel devices, ultimately enabling improved functionalities in graphene-based electronic components.