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Gate Dependent Tunnelling Current Modula

Muhammad Zahir Iqbal, Salma Siddique

2026engraphenehexagonal boron nitridevertical heterostructurestunneling currentfield-effect transistorsnanodevices

Abstract

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This study investigates the modulation of tunneling characteristics in graphene/hexagonal boron nitride (hBN) vertical heterostructures with varying hBN interlayer thicknesses. The objective is to understand how these thickness variations affect the device's threshold voltages and tunneling current, aiming to enhance the performance of graphene-based transistors for high-frequency applications. The methodology includes implementing back-gate voltages to manipulate the Fermi level in the bottom graphene layer, facilitating the tuning of threshold voltages. Results demonstrate an observable increase in threshold voltages corresponding to hBN layer thickness, as well as pronounced gate-dependent tunneling characteristics. This modulation of electronic properties indicates significant potential for optimizing vertical transistor designs, contributing to advancements in logic and tunnel devices, ultimately enabling improved functionalities in graphene-based electronic components.

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Cite This Work

@article{92e53ec2-ac08-47a0-9475-63519cbe25e7,
  title={Gate Dependent Tunnelling Current Modula},
  author={Muhammad Zahir Iqbal and Salma Siddique},
  year={2026},
  language={en}
}
TY  - JOUR
TI  - Gate Dependent Tunnelling Current Modula
AU  - Muhammad Zahir Iqbal
AU  - Salma Siddique
PY  - 2026
LA  - en
ER  -

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