A. Duval, M. Petit
This study examines the behavior of drain current in power MOSFETs under various thermal conditions, specifically focusing on the influence of gate-to-source and drain-to-source voltages. The objective is to establish a correlation between the thermal characteristics and the electrical performance of the devices. A series of experimental tests were conducted at junction temperatures of 25°C and 100°C while varying the gate-to-source (V_{GS}) and drain-to-source (V_{DS}) voltages. Measurements of drain current (I_{D}) and on-resistance (R_{DSON}) were recorded to analyze performance under fixed and variable conditions. Results indicate that increasing the temperature significantly affects the R_{DSON} and corresponds with an increase in I_{D}, confirming that temperature plays a critical role in the operational efficiency of the device. The findings contribute valuable insights into optimizing MOSFET designs for enhanced thermal management and reliability in power electronic applications.
@article{a0d981a3-8331-4071-8a54-e4ec617d7432,
title={mosfet},
author={A. Duval and M. Petit},
year={2026},
language={en}
}TY - JOUR TI - mosfet AU - A. Duval AU - M. Petit PY - 2026 LA - en ER -
Unknown, Unknown
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