New forms of luminescent silicon Silicon

In this study, we investigate the synthesis and application of the Me,AlNH, adduct as a precursor for aluminum nitride (AIN) film growth via metal-organic vapor phase epitaxy (MOVPE). The objective is to enhance the understanding of film deposition dynamics through the effective use of this novel precursor. We synthesized the Me,AlNH, adduct by bubbling NH3 through a solution of Me,Al in pentane, leading to a crystalline product. Characterization was achieved using techniques such as 'H NMR and ICP-ES, confirming the elemental composition and integrity of the compound. The AIN films were deposited using a horizontal MOVPE reactor, with precise control over temperature and pressure conditions to optimize vapor phase transport of the precursor. The resulting films were evaluated for their quality and morphology based on substrate preparation techniques, including degreasing and annealing. Our results demonstrate successful deposition of AIN films exhibiting favorable properties, highlighting the potential of using the Me,AlNH, adduct for improved film growth. The outcomes support further research on heterometallic alkoxides as single source precursors for multicomponent films in CVD applications.