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Low Partial Pressure Chemical Vapor Deposition of Graphene on Copper

Jie Sun, Niclas Lindvall

2012engraphenechemical vapor depositionnanoelectronicslow partial pressurematerial science

Abstract

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A systematic study of the Cu-catalyzed chemical vapor deposition of graphene under extremely low partial pressure is carried out. A carbon precursor supply of just PCH4 ∼ 0.009 mbar during the deposition favors the formation of large-area uniform monolayer graphene verified by Raman spectra. A diluted HNO3 solution is used to remove Cu before transferring graphene onto SiO2/Si substrates or carbon grids. The graphene can be made suspended over a ∼ 12 µm distance, indicating its good mechanical properties. Electron transport measurements show the graphene sheet resistance of ∼ 0.6 kΩ/□ at zero gate voltage. The mobilities of electrons and holes are ∼ 1800 cm2/Vs at 4.2 K and ∼ 1200 cm2/Vs at room temperature.

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@article{abfc3776-be67-4455-8dd6-f3961f6e5afe,
  title={Low Partial Pressure Chemical Vapor Deposition of Graphene on Copper},
  author={Jie Sun and Niclas Lindvall},
  year={2012},
  language={en}
}
TY  - JOUR
TI  - Low Partial Pressure Chemical Vapor Deposition of Graphene on Copper
AU  - Jie Sun
AU  - Niclas Lindvall
PY  - 2012
LA  - en
ER  -

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