Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable

The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on electron-beam programmable field-effect transistors (FETs). Using WSe2 as a model system, we demonstrate electron-beam-induced doping that enables reversible, precisely controlled carrier modulation exceeding 10^13 cm-2. The in-situ writing, erasing, and rewriting of ambipolar doping of nanoscale patterns was directly visualized by scanning microwave impedance microscopy. This mask-free, lithography-compatible approach can achieve precise band engineering within individual channels, yielding near-ideal subthreshold swings (~60 mV/dec) and finely tunable threshold voltages for both carrier types without specialized contact engineering. These capabilities allow on-demand realization of high-performance logic, including CMOS inverters with fine-tuning of voltage gain and power consumption.