CHUNJIN TIAN, HAIFEI LU
The present study investigated the effects of adding CH3COOH to HCl and HF used to purify metallurgical-grade Si (MG-Si). After 6 h of leaching MG-Si with an acid mixture consisting of 4 mol L−1 HCl, 3 mol L−1 HF, and 3 mol L−1 CH3COOH at 348 K, the total impurity removal efficiency was 88.5%, exceeding the 81.5% removal efficiency obtained without the addition of CH3COOH. The microstructural evolution of Si after etching with the two lixiviants indicated better dissolution of metal impurities in MG-Si when using the HCl-HF-CH3COOH mixture. Furthermore, the leaching kinetics of Fe using the HCl-HF and HCl-HF-CH3COOH mixtures were observed to depend on the interfacial chemical reactions.
@article{bba16d5b-7042-44cf-9a16-0e7452d96e16,
title={TOWARD RESOURCES AND PROCESSES SUSTAINABILITY: PART II Effect of CH3COOH on Hydrometallurgical Purification of Metallurgical-Grade Silicon Using HCl-HF Leaching},
author={CHUNJIN TIAN and HAIFEI LU},
year={2012},
language={en}
}TY - JOUR TI - TOWARD RESOURCES AND PROCESSES SUSTAINABILITY: PART II Effect of CH3COOH on Hydrometallurgical Purification of Metallurgical-Grade Silicon Using HCl-HF Leaching AU - CHUNJIN TIAN AU - HAIFEI LU PY - 2012 LA - en ER -
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