M. Vergnat, G. Marchal
This paper describes a new method to obtain hydrogenated amorphous semiconductor alloys. The method is reactive co-evaporation. Silicon tin hydrogenated alloys are prepared under atomic hydrogen atmosphere. We discuss the influence of various parameters of preparation (hydrogen pressure, tungsten tube temperature, substrate temperature, annealing...) on electrical properties of samples.
@article{c0263822-594b-4b99-a10a-c6f4f67a7a24,
title={Preparation of Hydrogenated Amorphous Si},
author={M. Vergnat and G. Marchal},
year={2026},
language={en}
}TY - JOUR TI - Preparation of Hydrogenated Amorphous Si AU - M. Vergnat AU - G. Marchal PY - 2026 LA - en ER -
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