Synthesis Transfer and Devices of Single

The advance of graphene-based nanoelectronics has been impeded by the challenge of producing single- or few-layer graphene over large areas. This study presents a straightforward, scalable, and cost-effective method for synthesizing graphene using methane-based chemical vapor deposition (CVD) on nickel films on complete Si/SiO2 wafers. By employing highly diluted methane, single- and few-layer graphene were successfully produced, as verified through micro-Raman spectroscopy. A transfer technique was developed to facilitate the transfer of the graphene films to target substrates via nickel etching. Field-effect transistors (FETs) fabricated with the graphene films on Si/SiO2 substrates demonstrated a weak p-type gate dependence, while the transfer of graphene films to glass substrates enabled their evaluation as transparent conductive films, achieving a transmittance of 80% within the visible wavelength range. This work emphasizes the potential for the scalable production and application of graphene in various electronic devices.