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Multicrystalline silicon production for

Sergey Beringov, Anatoly Shkulkov

2026enmulticrystalline siliconinduction meltingcold cruciblediffusion lengthgrain boundaries

Abstract

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Our progress in further development of the Induction Melting in Cold Crucible (IMCC) method for continuous production of multicrystalline silicon (mc-Si) for photovoltaic (PV) applications is reported, alongside the characteristics of the material produced by this method. The productivity of our IMCC equipment surpasses that of standard equipment for Directional Solidification (DS) in quartz crucibles by more than three times, providing a continuous process that eliminates the need for costly quartz crucibles. We investigated the properties of IMCC mc-Si using techniques such as Light Beam Induced Current (LBIC) and Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS). Our results, which are compared with those of standard mc-Si produced by DS in quartz crucibles, highlight significant improvements. Investigations revealed that the diffusion length in the corner of an ingot is limited by the number of grain boundaries, while in the central part, it is constrained by the presence of impurities frozen within the grains. Additionally, experimental results emphasized the necessity of adjusting temperature ramps during the cell manufacturing process to enhance the efficiency of solar cells fabricated from IMCC material.

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Cite This Work

@article{c44996a0-7d47-45ef-87f3-9090b4bbdd66,
  title={Multicrystalline silicon production for},
  author={Sergey Beringov and Anatoly Shkulkov},
  year={2026},
  language={en}
}
TY  - JOUR
TI  - Multicrystalline silicon production for
AU  - Sergey Beringov
AU  - Anatoly Shkulkov
PY  - 2026
LA  - en
ER  -

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