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eversvd,+3 (7)

Ong Johann, Noreffendy Tamaldin

2026ensemiconductor manufacturingwafer fabricationwet cleaningsalicide defectsprocess optimizationdefect reductionpre-metal layer cleaningsalicide residuediluted hydrofluoric acid

Abstract

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High yield with minimal defect is always a key focus in semiconductor wafer fabrication process. Salicide residue defect is one of the major killer defect in pre-metal front end wet cleaning process in wafer fabrication process. The defect is contributing a total of 1% loss in overall wafer fab sort yield, that is an equivalent to USD$ 5 million loss per year. The objective for this research is to characterise the residue defect element and to identify the root cause of the residue defect in the wafer substrate. Investigation of one factor at the time has been conducted with various experiments including screening all the hardware resources available by using ANOVA studies. The finding has concluded that the salicide residue consists of carbon defect is observed after Salicide Pre-Clean step when the standard diluted hydrofluoric acid (dHF) is used by the wet station equipment to clean the product wafers.

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Cite This Work

@article{d72bc2fd-4cb6-44c4-871e-b403026ec2c2,
  title={eversvd,+3 (7)},
  author={Ong Johann and Noreffendy Tamaldin},
  year={2026},
  language={en}
}
TY  - JOUR
TI  - eversvd,+3 (7)
AU  - Ong Johann
AU  - Noreffendy Tamaldin
PY  - 2026
LA  - en
ER  -

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