S.V.Suryanarayana, M. Raghavender
Sodium Bismuth Titanate (Na 0.5Bi0.5O3), known as NBT, is recognized as a key lead-free relaxor ferroelectric material due to its substantial remanent polarization (P r = 38 µC/cm2) and its dielectric transition temperature (Tc) at 320°C. NBT exhibits a notable dielectric anomaly within the temperature range of 500-600°C, prompting extensive research into the various electrical states occurring from room temperature to 550°C. Previous studies have shown that substitutions in both the A-site and B-site dopants alter NBT's relaxor characteristics, phase transitions, electromechanical properties, and piezoelectric responses, although explanations for these unique behaviors remain ambiguous. This study focused on the influence of heterovalent ion doping (Ce3+ and Sm3+) at the A-site on NBT's dielectric behavior and phase transitions. Our findings reveal a significant correlation between dopant-induced modulation of vacancies, micropolar regions, relaxor ferroelectricity, and the subsequent phase transitions that occur in NBT. Consequently, this research contributes to a deeper understanding of NBT's complex electrical behavior and lays the groundwork for future investigations into the material's properties and applications.
@article{daf0371e-4ab8-4847-83bd-de987a5ac800,
title={A-Site Substitution Controlled Dielectric Dispersion in Lead Free Sodium Bismuth Titanate},
author={S.V.Suryanarayana and M. Raghavender},
year={2023},
language={en}
}TY - JOUR TI - A-Site Substitution Controlled Dielectric Dispersion in Lead Free Sodium Bismuth Titanate AU - S.V.Suryanarayana AU - M. Raghavender PY - 2023 LA - en ER -
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