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Quantum Hall Effect in a Two-Dimensional Electron System Ben t by 90◦

M. Grayson, D. Schuh

2003enquantum hallelectron systemedge statesmagnetotransport

Abstract

Language:

Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90◦ corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with filling factor combinations which can all be explained using the standard Landauer-Büttiker edge channel picture. The success of this description confirms the realization of the first non-planar quantum Hall edge geometry.

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Cite This Work

@article{e978e04e-5bf5-43e7-9a8c-28ac8e27bcaf,
  title={Quantum Hall Effect in a Two-Dimensional Electron System Ben t by 90◦},
  author={M. Grayson and D. Schuh},
  year={2003},
  language={en}
}
TY  - JOUR
TI  - Quantum Hall Effect in a Two-Dimensional Electron System Ben t by 90◦
AU  - M. Grayson
AU  - D. Schuh
PY  - 2003
LA  - en
ER  -

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