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Integrating Graphene into Semiconductor Fabrication Lines

Daniel Neumaier, Stephan Pindl

2013Englishelectricityelectronicsgraphenesemiconductorscmossensors

Abstract

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Electronic and photonic devices based on two-dimensional graphene exhibit remarkable performance due to their unique properties. This study addresses the challenges of integrating graphene into existing semiconductor fabrication lines, aiming to facilitate its commercialization. The research highlights that while silicon has been the predominant material in microelectronics for decades, other semiconductors possess superior properties, yet their complexity limits their market viability. The focus is on graphene's extraordinary attributes, including high carrier mobility and broad optical absorption, which have already been exploited in high-performing devices like infrared photodetectors and sensors. However, the current reliance on silicon and MEMS technology in markets for magnetic field, pressure, and gas sensors creates barriers to graphene's entry. A scalable manufacturing process is deemed essential for unlocking graphene's potential, specifically in the sensors industry, which may also catalyze advancements in other applications. The study underscores the necessity of developing a reliable, large-scale production process to enhance graphene's competitiveness and broaden its application scope.

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Cite This Work

@article{f3036ecc-f053-47b8-aaf7-0c173c6ee03d,
  title={Integrating Graphene into Semiconductor Fabrication Lines},
  author={Daniel Neumaier and Stephan Pindl},
  year={2013},
  language={English}
}
TY  - JOUR
TI  - Integrating Graphene into Semiconductor Fabrication Lines
AU  - Daniel Neumaier
AU  - Stephan Pindl
PY  - 2013
LA  - English
ER  -

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