CVD growth of large area and uniform graphene on tilted copper foil for high performance flexible transparent conductive film†

This study investigates the synthesis of a large area, uniform graphene film on tilted copper foil within a chemical vapor deposition (CVD) system, aiming to enhance graphene quality for high performance flexible transparent conductive films. The methodology involves tilting the copper foil against the gaseous flow during the CVD process, utilizing geometrical fluidic dynamics to promote uniformity in graphene growth. The experimental results demonstrate that graphene films with grain sizes reaching up to ten micrometers and exhibiting minimal defects can be synthesized under optimized parameters of growth time, methane concentration, and temperature. Assessments of field effect transistors fabricated from the grown graphene reveal impressive carrier mobilities of up to 5080.5 cm²/V·s, indicating high-quality graphene. The study highlights the potential of these uniform graphene films as effective alternatives to indium tin oxide (ITO) in applications such as flexible displays and touch screens, showing a remarkable transmittance of 96.5% at 550 nm with a sheet resistance of 24,600 Ω/sq, and a transmittance of 86.7% at the same wavelength with a lower sheet resistance of 24,400 Ω/sq. This research contributes to the advancement of materials suitable for next-generation electronic devices.