G. Garg, S. Bobe
This study investigates a silicon-doped cation-deficient thiospinel, Cu5.52(8)Si1.04(8)1.44Fe4Sn12S32, synthesized by quenching single crystals from a high temperature of 680°C. The objective is to analyze the crystal structure and electrical properties of this compound with a focus on the effects of silicon doping on its vacancies and oxidation states. Employing X-ray diffraction for structural identification and Mössbauer spectroscopy for electronic state analysis, it was found that the thiospinel crystallizes in the Fd3m space group with a lattice parameter of 10.3326(2) Å. The results show that silicon doping introduces additional vacancies at the copper sites, significantly impacting the oxidation states of tin and iron within the crystal lattice. Notably, Mössbauer data indicated the presence of Sn in both II and IV oxidation states, while iron was found in II and III states within octahedral sites. The compound exhibits semiconducting behavior, characterized by a resistivity of approximately 1 × 10^2 Ω-cm at room temperature and a small band gap of around 0.1 eV. This research contributes to the understanding of thiospinel materials for potential applications in electrochemical systems.
@article{ff987fce-ea6a-41f0-a11d-5f4c364b6845,
title={A New Silicon Doped Cation Deficient Thi},
author={G. Garg and S. Bobe},
year={2026},
language={en}
}TY - JOUR TI - A New Silicon Doped Cation Deficient Thi AU - G. Garg AU - S. Bobe PY - 2026 LA - en ER -
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